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Method for Manufacturing a Membrane Filter.

 

CLAIMS

                                                                                                                               SUMMARY                   DRAWINGS                          DESCRIPTION (RU)    

 

Subject to sell:

       Cession of rights to acquisition of a national patent in PCT system States according to the PCT application # PCT/RU2011/000637 (WO 2012/039645) filed 24.08.2011 with priority 10.09.2010

 

 1.A method for manufacturing a membrane filter with equal dimensions and equiform pores,   comprising exposition of a polymer film to radiation, resulting in local chemical destruction of the film material, and  etching destruction material products from  irradiated  sites of the polymer film, what supplies the pores forming in the polymer film,

characterized in that

the polymer film irradiation is  effected with  the synchrotron radiation, which is  structurally ordered,  using a lattice multibeam   interference lithography system, in the chamber, filled with hydrogen gas, which reacts photochemically with the polymer film material in irradiated sites of the polymer film, generating volatile products, removed during  irradiation.

2. The method of  claim 1, wherein the synchrotron radiation from an undulator in the range of wave length from 5 to 100 nm is used.

3. The method of claim 2, wherein  the radiation with the wave length 13.5 nm is used.

4. The method of claim 1, wherein  hydrogen pressure in the chamber from 0.5 to 2 Pa is used.

 5. The method according to claim 1, characterized in that the four-beam  lattice interference lithography system with or equal (for production of round in cross-section pores ), or different (for production of elliptical in cross-section pores) lattice spacings of diffraction lattice pairs is used.

 6. The method of claim 1, wherein the membrane filter with predetermined dimensions of the pores passageway and with predetermined porosity value is made, using diffraction lattice pairs with   selected properly lattice spacings and the proper exposition time, on the base of  known beam density distribution on the polymer film surface after the  lattice interference lithography system, and pre-determined dependence of the polymer film material photoetching rate on the radiation beam density.

7. The  method of claim 1, wherein  or polyethylene terephthalate, or polyimide, or polycarbonate, or polysiloxane, or carbon is used as a polymer film material.

9. The method according to claim 1, characterized in that  in the specific case of the membrane filter production from a less 100 nm thickness polymer film, the last is applied on the surface of a  50 to 100 μm thickness silicon wafer, from the other side of which, windows with from 10 to 100 μm dimension, which is selected properly to  ensure the membrane filter  strength under predetermined filtration pressure, are broken through up-to the polymer film  by mask lithography and silicon etching, and the lattice interference lithography is executed  on the polymer film.

 10. The method according to claim 1, characterized in that  in the specific case of the membrane filter production from an inorganic material film,  a less 100 nm thickness polymer film is applied on a less 100nm thickness inorganic material layer, which has been applied on the surface of  a from 50 to 100 μm thickness silicon wafer, from the other side of which, windows with the from 10 to 100 μm dimension, that is selected properly to  ensure the inorganic material membrane filter  strength under predetermined filtration pressure, are broken through up-to the inorganic material film  by the mask lithography and silicon etching, the lattice interference lithography is executed  on the polymer film,  and pores in the inorganic material film are obtained by chemical etching the inorganic material film through the mask, obtained from the polymer film.

 11. The method of or  claim 9, or claim 10, wherein the windows in the silicon wafer are performed or circular, or rectangular cross-section.

12. The method of claim 10, wherein a mentioned above inorganic material is or silicon nitride, or silicon carbide, or boron nitride, or  boron carbide, or titanium nitride, or metal (or aurum, or platinum, or palladium, or titanium, or zirconium, or alloys thereof, including with other metals).

13 The method according to claim 1, characterized in that  in the specific case of an all-metal membrane filter production,  the layer metal thickness of less than 100 nm  is applied on a silicon wafer, on the metal layer the photoresist coating  thickness  from 50 to 100 μm is applied, on the photoresist coating  the mask photolithography is carried out to produce  round or rectangular in cross-section columns with transverse size from 10 to 100 μm of insoluble in developer photoresist, after developing the photoresist, the  metal layer on the  opened in development surface is  made thicker up-to from 1 to 10 μm by galvanoplastics, the photoresist columns are removed, the silicon wafer is removed, on the  opened after the wafer removing surface of the metal layer the polymer film thickness of less then 100 nm  is applied, and the  lattice interference lithography is carried out on the polimer film, and, through  thus obtained mask the chemical etching of the  metal film  is carried out to form  pores in it .

14. The method of claim 13, wherein a metal is used: or aurum, or platinum, or palladium, or titanium, or zirconium, or chromium, or their alloys, including with other metals.